Trinasolar has announced that its high-efficiency n-type solar total passivation (TOPAS) heterojunction (HJT) PV modules have achieved an aperture module efficiency of 25.44%, setting a world record for large-area HJT PV modules. This is independently confirmed by the photovoltaic calibration laboratory at the Fraunhofer ISE (CalLab) in Freiburg, Germany. The reported module sets a record for PV modules based on crystalline silicon solar cell with front and back contact structure, which is also a world record of module efficiency for a silicon module.
The record-breaking module is based on high-performance n-type TOPAS HJT solar cell with outstanding performance advantages, featuring both a substrate of large-area n-type phosphorus-doped Czochralski silicon (Cz-Si) wafer (210×105 mm2) pioneered by Trinasolar, and the integration of optimized thin-film passivation, fully passivated contact, and progressive variable-frequency-RF p-type emitter. The adoption of advanced light-trapping, ultra-high-density packaging and ultra-low-resistance interconnection has resulted in a significant breakthrough in the module's optical and electrical performance.
Gao Jifan, Chairman and CEO of Trinasolar said: “This sets a new world record for large-area single-junction c-Si solar PV modules. It demonstrates the strong technical potential of TOPAS cells and reinforces the technology advantage for Trina Solar as a PV leader.“
Last year Trinasolar twice set a world record for n-type Cz-Si tunneling oxide passivated contacts (TOPCon) solar cell efficiency, at 25.9% in October, and at 26.58% in November. Trina also set a world record in December for n-type Cz-Si HJT solar cell, achieving 27.08% efficiency. This module efficiency record, which is based on front and back contact cell architecture, demonstrated that front-side efficiency can exceed 25.4% and underlined Trinasolar's preeminence with advanced silicon PV modules.